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| STTH60R04 Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj VF (typ) trr (typ) 60 A 400 V 175 C 0.95 V 31 ns A K Features and benefits Very low switching losses High frequency and/or high pulsed current operation High junction temperature K A DO-247 STTH60R04W Description The STTH60R04 series uses ST's new 400 V planar Pt doping technology. The STTH60R04 is specially suited for switching mode base drive and transistor circuits. Available in a through-the-hole package, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. Table 1. Symbol VRRM VRSM IF(RMS) IF(AV) IFRM IFSM Tstg Tj Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Average forward current, = 0.5 Repetitive peak forward current tp = 5 s F = 1 kHz square Tc = 110 C Order codes Part Number STTH60R04W Marking STTH60R04W Absolute ratings (limiting values at 25 C, unless otherwise specified) Parameter Value 400 400 100 60 375 650 -65 to +175 -40 to +175 Unit V V A A A A C C Surge non repetitive forward current tp = 10 ms Sinusoidal Storage temperature range Operating junction temperature range March 2007 Rev 1 1/7 www.st.com Characteristics STTH60R04 1 Characteristics Table 2. Thermal parameters Parameter Junction to case Value 0.7 Unit C/W Symbol Rth(j-c) Table 3. Symbol IR(1) Static electrical characteristics Parameter Reverse leakage current Test conditions Tj = 25 C Tj = 125 C Tj = 25 C VR = VRRM Min Typ Max 60 A 60 600 1.5 IF = 60 A 1.05 0.95 1.3 1.2 V Unit VF(2) Forward voltage drop Tj = 100 C Tj = 150 C 1. Pulse test: tp = 5 ms, < 2 % 2. Pulse test: tp = 380 s, < 2 % To evaluate the conduction losses use the following equation: P = 0.9 x IF(AV) + 0.005 x IF2(RMS) Table 4. Symbol Dynamic characteristics Parameter Test conditions IF = 1 A, dIF/dt = -50 A/s, VR = 30 V, Tj = 25 C Min Typ Max 80 40 31 11 0.4 800 3.2 ns V 55 45 16 A ns Unit trr Reverse recovery time IF = 1 A, dIF/dt = -100 A/s, VR = 30 V, Tj = 25 C IF = 1 A, dIF/dt = -200 A/s, VR = 30 V, Tj = 25 C IRM S tfr VFP Reverse recovery current Softness factor Forward recovery time Forward recovery voltage IF = 60 A, dIF/dt = -200 A/s, VR = 320 V, Tj = 125 C IF = 60 A, dIF/dt = -200 A/s, VR = 320 V, Tj = 125 C IF = 60 A, dIF/dt = 100 A/s VFR = 1.1 x VFmax, Tj = 25 C IF = 60 A Tj = 25 C dIF/dt = 100 A/s 2/7 STTH60R04 Characteristics Figure 1. P(W) Conduction losses versus average current =0.5 =0.2 =0.1 =0.05 =1 Figure 2. IFM(A) Forward voltage drop versus forward current 100 200 180 160 140 120 100 80 TJ=150C (Maximum values) 60 TJ=150C (Typical values) 40 T 80 60 20 IF(AV)(A) 40 TJ=25C (Maximum values) =tp/T 50 60 70 tp 20 VFM(V) 0 0 0 10 20 30 40 80 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Peak reverse recovery current versus dIF/dt (typical values) Zth(j-c)/Rth(j-c) 1.0 Single pulse DO-247 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 IRM(A) IF= 60A VR=320V Tj=125 C tp(s) 0.1 1.E-03 1.E-02 1.E-01 1.E+00 2.5 0.0 10 Tj=25 C dIF/dt(A/s) 100 1000 Figure 5. tRR(ns) Reverse recovery time versus dIF/dt (typical values) IF= 60A VR=320V Figure 6. QRR(nC) IF= 60 A VR=320V Reverse recovery charges versus dIF/dt (typical values) 160 140 120 100 800 700 600 500 Tj=125 C Tj=125 C 80 60 40 20 0 10 100 1000 400 300 Tj=25 C 200 100 Tj=25 C dIF/dt(A/s) 0 10 100 dIF/dt(A/s) 1000 3/7 Characteristics STTH60R04 Figure 7. Relative variations of dynamic parameters versus junction temperature Figure 8. Transient peak forward voltage versus dIF/dt (typical values) 1.4 1.2 1.0 0.8 0.6 QRR [Tj]/QRR [Tj = 125 C] and IRM [Tj]/IRM [Tj = 125 C] IF=60A VR=320V VFp(V) 10 9 8 7 IF= 60A Tj=125C IRM 6 5 4 QRR 0.4 0.2 T j(C) 0.0 25 50 75 100 125 150 3 2 1 0 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/s) Figure 9. Forward recovery time versus dIF/dt Figure 10. Junction capacitance versus (typical values) reverse voltage applied (typical values) C(pF) 1000 IF=60A VFR=1.1 x V F max. Tj=125C F=1MHz VOSC=30mVRMS Tj=25C 3000 tFR(ns) 2500 2000 1500 1000 500 dIF/dt(A/s) VR(V) 0 0 100 200 300 400 500 100 1 10 100 1000 4/7 STTH60R04 Package information 2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 Nm Maximum torque value: 1.0 Nm DO-247 dimensions Dimensions Ref. Millimeters Min. A V Table 5. Inches Min. 0.191 0.086 0.015 0.039 0.078 Typ. Max. 0.203 0.102 0.031 0.055 Typ. Max. 5.15 2.60 0.80 1.40 4.85 2.20 0.40 1.00 2.00 2.00 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 2.00 5 60 3.55 D E Dia V F F2 H A F3 G 2.40 0.078 0.429 0.094 L5 H L L2 L4 F2 L3 F3 V2 F G M E L1 D 15.75 0.608 20.15 0.781 4.30 0.145 0.728 14.80 0.559 1.362 0.216 3.00 0.078 5 60 3.65 0.139 0.620 0.793 0.169 L L1 L2 L3 L4 L5 M V V2 Dia. 0.582 0.118 0.143 In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information STTH60R04 3 Ordering information Part Number STTH60R04W Marking STTH60R04W Package DO-247 Weight 4.40 g Base qty 30 Delivery mode Tube 4 Revision history Date 31-Mar-2007 Revision 1 First issue Description of Changes 6/7 STTH60R04 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7 |
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